Yayın Ağı
SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler
Characterization of PbMo0.3W0.7O4 Crystal: A Potential Material for Photocatalysis and Optoelectronic Applications
Revealing the Effects of Defect States on the Nonlinear Absorption Properties of the TlInsse and Tl2In2S3Se Crystals in Near-Infrared Optical Limiting Applications
Optical characterization of NaBi(MoO4)2 crystal by spectroscopic ellipsometry
Applied Physics A: Materials Science and Processing
, cilt.130, sa.9, 2024 (SCI-Expanded)
Temperature-dependent tuning of band gap of Fe3O4 nanoparticles for optoelectronic applications
Revealing defect centers in PbWO<sub>4</sub> single crystals using thermally stimulated current measurements
Temperature-dependent optical properties of TiO2 nanoparticles: a study of band gap evolution
Temperature-dependent current–voltage characteristics of p-GaSe0.75S0.25/n-Si heterojunction
Applied Physics A: Materials Science and Processing
, cilt.129, sa.8, 2023 (SCI-Expanded)
Growth and temperature-tuned band gap characteristics of LiGd(MoO4)2 single crystals for optoelectronic applications
Temperature dependence of band gap of CeO2 nanoparticle photocatalysts
Spectroscopic ellipsometry studies of optical properties of TlIn(S0.25Se0.75)2 crystal
Applied Physics A: Materials Science and Processing
, cilt.129, sa.6, 2023 (SCI-Expanded)
Growth and temperature tuned band gap characteristics of NaBi(MoO4)2 single crystal
Nonlinear optical absorption characteristics of PbMoO4 single crystal for optical limiter applications
Investigation of linear and nonlinear optical properties of PbWO4 single crystal
Linear and nonlinear optical characteristics of PbMoO4 single crystal for optoelectronic applications
Journal of Materials Science: Materials in Electronics
, cilt.33, sa.28, ss.22281-22290, 2022 (SCI-Expanded)
Linear and nonlinear optical characteristics of Bi12SiO20 single crystals
Spectroscopic ellipsometry characterization of PbWO4 single crystals
Temperature-tuned optical bandgap of Al-doped ZnO spin coated nanostructured thin films
Study of the structural and optical properties of thallium gallium disulfide (TlGaS2) thin films grown via thermal evaporation
Investigation of optical characteristics of PbMoO4 single crystals by spectroscopic ellipsometry
Thermoluminescence characteristics of GaSe and Ga2Se3 single crystals
Temperature dependent bandgap in NaBi(WO4)2 single crystals
Effect of temperature on band gap of PbWO4 single crystals grown by Czochralski method
Thermoluminescence properties and trapping parameters of TlGaS2 single crystals
Structural and temperature-tuned band gap energy characteristics of PbMoO4 single crystals
Structural and optical characteristics of thermally evaporated TlGaSe2 thin films
Temperature-dependent optical characteristics of sputtered NiO thin films
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
, cilt.128, sa.1, 2022 (SCI-Expanded)
Investigation of defect levels in Bi12SiO20 single crystals by thermally stimulated current measurements
Trapping centers in Bi12TiO20 single crystals by thermally stimulated current
The effect of Zn concentration on the structural and optical properties of Cd1-xZnxS nanostructured thin films
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.20, ss.25225-25233, 2021 (SCI-Expanded)
Evaluation of mechanical properties of Bi12SiO20 sillenite using first principles and nanoindentation
Structural and temperature-tuned bandgap characteristics of thermally evaporated beta-In2S3 thin films
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.12, ss.15851-15856, 2021 (SCI-Expanded)
Defect characterization in Bi12GeO20 single crystals by thermoluminescence
Optical and structural characteristics of electrodeposited Cd 1-xZnxS nanostructured thin films
Spectroscopic ellipsometry study of Bi12TiO20 single crystals
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.6, ss.7019-7025, 2021 (SCI-Expanded)
Temperature effects on optical characteristics of CdSe thin films
Structural and optical properties of thermally evaporated (GaSe)0.75-(GaS)0.25 thin films
Optical and Nanomechanical Properties of Ga(2)Se(3)Single Crystals and Thin Films
Temperature-tuned bandgap characteristics of Bi12TiO20 sillenite single crystals
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.32, sa.1, ss.1316-1322, 2021 (SCI-Expanded)
Investigation of structural and optical characteristics of thermally evaporated Ga2Se3 thin films
Vibrational modes in (TlGaS2)(x)-(TlGaSe2)(1-x)mixed crystals by Raman measurements: compositional dependence of the mode frequencies and line-shapes
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.17, ss.14330-14335, 2020 (SCI-Expanded)
TL and OSL studies on gallium sulfide (GaS) single crystals
Temperature-tuned band gap properties of MoS2 thin films
Structural and temperature-tuned optical characteristics of Bi12GeO20 sillenite crystals
Thermoluminescence characteristics of Bi 12 SiO 20 single crystals
Temperature dependent band gap in SnS2xSe(2-2x) (x=0.5) thin films
Influence of temperature on optical properties of electron-beam-evaporated ZnSe thin film
Investigation of optical properties of Bi12GeO20 sillenite crystals by spectroscopic ellipsometry and Raman spectroscopy
Structural and optical properties of thermally annealed thallium indium disulfide thin films
Temperature-dependent material characterization of CuZnSe2 thin films
Synthesis and temperature-tuned band gap characteristics of magnetron sputtered ZnTe thin films
Optical constants and critical point energies of (AgInSe2)(0.75)-(In2Se3)(0.25) single crystals
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.6, ss.4702-4707, 2020 (SCI-Expanded)
Material and device properties of Si-based Cu0.5Ag0.5InSe2 thin-film heterojunction diode
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.31, sa.2, ss.1566-1573, 2020 (SCI-Expanded)
Temperature-dependent band gap characteristics of Bi12SiO20 single crystals
The defect state of Yb-doped ZnO nanoparticles using thermoluminescence study
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.100, ss.29-34, 2019 (SCI-Expanded)
Temperature dependence of band gaps in sputtered SnSe thin films
Effect of heating rate on thermoluminescence characteristics of Y2O3 nanoparticles
Traps distribution in sol-gel synthesized ZnO nanoparticles
Optical properties of (Ga2Se3)(0.)(75) - (Ga2S3)(0.)(25) single crystals by spectroscopic ellipsometry
Analysis of temperature-dependent transmittance spectra of Zn0.5In0.5Se (ZIS) thin films
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
, cilt.30, sa.10, ss.9356-9362, 2019 (SCI-Expanded)
Structural and temperature-dependent optical properties of thermally evaporated CdS thin films
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.93, ss.148-152, 2019 (SCI-Expanded)
Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry
Gd-doped ZnO nanoparticles: Synthesis, structural and thermoluminescence properties
Low temperature thermoluminescence of Gd2O3 nanoparticles using various heating rate and T-max - T-exc. methods
Low temperature thermoluminescence behaviour of Y2O3 nanoparticles
Optical band gap and dispersion of optical constants of Cu-Ga-S thin films
Spectroscopic ellipsometry investigation of optical properties of beta-Ga2S3 single crystals
Characterization of T1InS1.8Se0.2 as advanced functional crystals
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.87, ss.174-180, 2018 (SCI-Expanded)
Composition-tuned optical absorption and luminescence of TlGaxIn1-xS2 layered mixed crystals at T=10 K
Structural and optical properties of thermally evaporated Cu-Ga-S (CGS) thin films
Thermoluminescence properties of Al doped ZnO nanoparticles
Thermoluminescence study in Cu3Ga5S9 single crystals: Application of heating rate and T-m-T-stop methods
Study on thermoluminescence of TlInS2 layered crystals doped with Pr
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.80, ss.99-103, 2018 (SCI-Expanded)
Characteristic features of thermoluminescence in neodymium-doped gallium sulfide
Characterization of defect states in Ga-rich gallium arsenide crystals by thermally stimulated current
IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE
, cilt.42, sa.A2, ss.947-950, 2018 (SCI-Expanded)
Trap characterization by photo-transferred thermoluminescence in MgO nanoparticles
Determination of Trapping Parameters of Tl2In2S3Se Layered Single Crystal by Thermoluminescence
Study of vibrational modes in CuxAg1-xIn5S8 mixed crystals by infrared reflection measurements
Trap distribution in AgIn5S8 single crystals: Thermoluminescence study
Low temperature absorption edge and photoluminescence study in TlIn(Se1-xSx)(2) layered mixed crystals
Optical properties of Cu3In5S9 single crystals by spectroscopic ellipsometry
Optical and photoelectrical properties of TlInSSe layered single crystals
Thermoluminescence in gallium sesquisulfide single crystals: usual and unusual heating rate dependencies
Characterization of trap centers in Gd2O3 nanoparticles by low temperature thermoluminescence measurements
Composition-tuned band gap energy and refractive index in GaSxSe1-x layered mixed crystals
Dose dependence effect of thermoluminescence process in TlInS2:Nd single crystals
Far-infrared lattice vibration spectra of copper gallium (indium) ternary selenides (tellurides): A consequence of trivalent cation and anion interrelation
Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements
Long-wavelength lattice vibrations of Ag3In5Se9 and Ag3In5Te9 single crystals: An inversion of LO- and TO-mode frequencies
Near-infrared photoluminescence and thermally stimulated current in Cu3Ga5Se9 layered crystals: A comparative study
Low-temperature photoluminescence in CuIn5S8 single crystals
Thermoluminescence properties of ZnO nanoparticles in the temperature range 10-300 K
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
, cilt.78, sa.1, ss.76-81, 2016 (SCI-Expanded)
Ellipsometric study of optical properties of GaSxSe1-x layered mixed crystals
Comparative study of low-temperature photoluminescence and thermally stimulated current in quinary Tl4Ga3InSe6S2 layered crystals
Defect characterization of Ga4Se3S layered single crystals by thermoluminescence
Optical characterization of CuIn5S8 crystals by ellipsometry measurements
Optical constants of silver and copper indium ternary sulfides from infrared reflectivity measurements
MgO/GaSe0.5S0.5 Heterojunction as Photodiodes and Microwave Resonators
Low-temperature thermoluminescence study of GaSe: Mn layered single crystals
Optical parameters of anisotropic chain-structured Tl2InGaTe4 crystals by spectroscopic ellipsometry
Temperature-tuned band gap energy and oscillator parameters of GaS0.5Se0.5 single crystals
Infrared-active modes in Ag3Ga5S9 and Ag3In5S9 single crystals: An influence of trivalent cation substitution
Combined low-temperature photoluminescence and thermally stimulated current studies in Cu3In5S9 layered single crystals
Analysis of glow curve of GaS0.5Se0.5 single crystals
Ellipsometry study of optical parameters of AgIn5S8 crystals
Characterization of the MgO/GaSe0.5S0.5 heterojunction designed for visible light communications
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.39, ss.377-383, 2015 (SCI-Expanded)
Transmission, reflection and thermoluminescence studies on GaS0.75Se0.25 layered single crystals
Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence
Characterization of defect states in Ag0.5Cu0.5In5S8 solid solution by photoluminescence and thermally stimulated current
Band gap and refractive index tunability in thallium based layered mixed crystals
Optical characterization of Ga2SeS layered crystals by transmission, reflection and ellipsometry
Composition dependence of lattice parameters and band gap energies of thallium based layered mixed crystals
Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl2Ga2S3Se crystals
Low temperature thermoluminescence of quaternary thallium sulfide Tl4InGa3S8
Thermally assisted variable range hopping in Tl4S3Se crystal
Low temperature thermally stimulated current measurements in N-implanted TlGaSeS layered single crystals
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.34, ss.121-125, 2015 (SCI-Expanded)
Analysis of the Junction Properties of C/GaSe0.5S0.5/C Back-to-Back Schottky-Type Photodetectors
Thermoluminescence in gallium sulfide crystals: an unusual heating rate dependence
p-TlGaSeS/n-BN heterojunction as a microwave filter and as a photovoltaic device
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.212, sa.3, ss.600-606, 2015 (SCI-Expanded)
Photon assisted hopping conduction mechanism in Tl2SSe crystals
Energy Band Diagram And Current Transport Mechanism In p-MgO/n-Ga4Se3S
IEEE TRANSACTIONS ON ELECTRON DEVICES
, cilt.62, sa.1, ss.102-106, 2015 (SCI-Expanded)
Low-Temperature Thermo luminescence Studies on TlInS2 Layered Single Crystals
Anomalous heating rate dependence of thermoluminescence in Tl2GaInS4 single crystals
Characteristics of traps in Tl2Ga2Se3S single crystals by low-temperature thermoluminescence measurements
Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1-x) mixed crystals
Annealing effect on the low temperature thermoluminescence properties of GaSe single crystals
Compositional Dependence of Optical Modes Frequencies in T1Ga(x)In(1-x)S(2) Layered Mixed Crystals (0 <= x <= 1)
Thermoluminescence study on TlGaSSe layered single crystals
Determination of trapping parameters in Tl4Ga3InSe8 single crystals by thermally stimulated luminescence
Dielectric and photo-dielectric properties of TlGaSeS crystals
Trapping centers and their distribution in Tl2InGaSe4 single crystals by thermally stimulated luminescence
Optical dynamics of MgO/Ga4Se3S interface
Thermoluminescence characteristics of Tl4GaIn3S8 layered single crystals
Optical properties of TlGaxIn1-xSe2-layered mixed crystals (0.5 <= x <= 1) by spectroscopic ellipsometry, transmission, and reflection
Interband critical points in TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1)
TL and TSC studies on TlGaSe2 layered single crystals
Mixed conduction and anisotropic single oscillator parameters in low dimensional TlInSe2 crystals
Temperature-dependent electrical resistivity, space-charge-limited current and photoconductivity of Ga0.75In0.25Se single crystals
Multiphonon absorption processes in layered structured TlGaS2, TlInS2 and TlGaSe2 single crystals
Thermoluminescence properties of Tl2Ga2S3Se layered single crystals
Trapping Center Parameters in N-Implanted Tl2Ga2S3Se Single Crystals by Thermally Stimulated Currents Measurements
Low-temperature thermoluminescence in TlGaS2 layered single crystals
Infrared and Raman scattering spectra of layered structured Ga3InSe4 crystals
Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals
Temperature-dependent absorption edge and photoconductivity of Tl2In2S3Se layered single crystals
Optical constants and interband transitions of anisotropic layered structured Tl2GaInS4 crystals by spectroscopic ellipsometry
Low-temperature photoluminescence in layered structured TlGa0.5In0.5Se2 crystals
Hall mobility and photoconductivity in TlGaSeS crystals
Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements
Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals
Driving electric field effects on the space charge limited photocurrent of In6S7
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
, cilt.7, ss.137-140, 2013 (SCI-Expanded)
Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals
Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals
Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals
Dielectric functions and interband critical points of anisotropic chain structured TlSe single crystals
Tuning Optical Absorption Edge by Composition and Temperature in TlGaS2xSe2((1-x)) Layered Mixed Crystals (0 <= x <= 1)
Ellipsometry study of interband transitions in TlGaS2xSe2(1-x) mixed crystals (0 <= x <= 1)
Compositional dependence of refractive index and oscillator parameters in T1GaS(2x)Se(2(1-x)) layered mixed crystals (0 <= x <= 1)
Investigation of the electrical parameters of Ag/p-TlGaSeS/C Schottky contacts
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
, cilt.177, sa.12, ss.981-985, 2012 (SCI-Expanded)
Temperature-dependent capacitance-voltage biasing of the highly tunable TlGaTe2 crystals
Photovoltaic Effect and Space Charge Limited Current Analysis in TlGaTe2 Crystals
Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission, and ellipsometric measurements
Dynamical and passive characteristics of the Ag/TlGaSeS/Ag RF resonators
Absorption edge and optical constants of layered structured Tl2Ga2Se3S single crystals
Determination of optical parameters of Ga0.75In0.25Se layered crystals
Optical constants of layered structured Ga0.75In0.25Se crystals from the ellipsometric measurements
Raman scattering in TlInS2xSe2(1-x) layered mixed crystals (0.25 <= x <= 1): Compositional dependence of the mode frequencies and line widths
Transient and steady state photoelectronic analysis in TlInSe2 crystals
Design and characterization of TlInSe2 varactor devices
Characterization of Ag/TlInSe2/Ag structure
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.208, sa.7, ss.1688-1692, 2011 (SCI-Expanded)
Trapping center parameters in In6S7 crystals
Thermally stimulated current measurements in undoped Ga3InSe4 single crystals
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
, cilt.72, sa.6, ss.768-772, 2011 (SCI-Expanded)
Estimation of thermally stimulated current in as grown TlGaSeS layered single crystals by multilayered perceptron neural network
Growth and characterization of Tl3InSe4 single crystals
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.14, sa.2, ss.175-178, 2011 (SCI-Expanded)
Temperature- and excitation-dependent photoluminescence in TlGaSeS layered crystals
Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2 Chain Crystals
Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlInS2xSe2(1-x) (0.25 <= x <= 1) layered mixed crystals
Computational modeling of isothermal decay curves of trapping centers in TlGaSeS layered single crystals
DETERMINATION OF TRAPPING CENTER PARAMETERS OF Tl2Ga2S3Se LAYERED CRYSTALS BY THERMALLY STIMULATED CURRENT MEASUREMENTS
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
, cilt.24, sa.14, ss.2149-2161, 2010 (SCI-Expanded)
Optical properties of TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1) I. Composition- and temperature-tuned energy band gap
Effect of temperature and isomorphic atom substitution on optical absorption edge of TlInS2xSe2(1-x) mixed crystals (0.25 <= x <= 1)
Influence of photonic excitations on the electrical parameters of TlInS2 crystals
Properties of Tl4Se3S single crystals and characterization of Ag/Tl4Se3S Schottky barrier diodes
Anisotropic electrical and dispersive optical parameters in InS layered crystals
Optical properties of Tl2In2Se3S layered single crystals
Trapping centers and their distribution in Tl2In2Se3S layered single crystals
Optoelectronic properties of Tl3InSe4 single crystals
Shallow trapping center parameters in as-grown AgIn5S8 crystals determined by thermally stimulated current measurements
Thermally stimulated current observation of trapping centers and their distribution in as-grown TlGaSeS layered single crystals
Transport and recombination kinetics in TlGaTe2 crystals
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.206, sa.11, ss.2555-2558, 2009 (SCI-Expanded)
Thermally stimulated current measurements in as-grown TIGaSeS layered single crystals
Trapping center parameters in TlInSSe layered single crystals bit thermally stimulated currents measurements
Structural, electrical and anisotropic properties of Tl4Se3S chain crystals
Determination of deep trapping center parameters in as-grown Tl2Ga2S3Se layered crystals
Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements
Hole-polar phonon interaction scattering mobility in chain structured TlSe0.75S0.25 crystals
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.206, sa.7, ss.1565-1568, 2009 (SCI-Expanded)
Analysis of the Hall effect in TlGaTe2 single crystals
Trapping centers and their distribution in Tl2Ga2Se3S layered single crystals
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
, cilt.70, sa.6, ss.1048-1053, 2009 (SCI-Expanded)
Temperature- and photo-excitation effects on the electrical properties of Tl4Se3S crystals
Deep Traps Distribution in TlInS2 Layered Crystals
Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals
Determination of trapping parameters in n-Ga4Se3S by thermally stimulated current measurements
Hopping conduction in Ga4Se3S layered single crystals
Dark electrical conductivity and photoconductivity of Ga(4)Se(3)S layered single crystals
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
, cilt.69, sa.11, ss.2719-2722, 2008 (SCI-Expanded)
Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
, cilt.69, sa.10, ss.2385-2389, 2008 (SCI-Expanded)
Temperature-tuned band gap energy and oscillator parameters of TlInSeS layered single crystals
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
, cilt.22, sa.22, ss.3931-3939, 2008 (SCI-Expanded)
Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.205, sa.7, ss.1662-1665, 2008 (SCI-Expanded)
Optoelectronic properties of Ga(4)Se(3)S-layered single crystals
Crystal data and indirect optical transitions in Tl2InGaSe4 crystals
Temperature and excitation intensity tuned photoluminescence in Tl4GaIn3S8 layered single crystals
Electron-lattice interaction scattering mobility in Tl(2)InGaSe(4) single crystals
Trap distribution in TlInS2 layered crystals from thermally stimulated current measurements
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
, cilt.52, sa.2, ss.367-373, 2008 (SCI-Expanded)
Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals
Optical properties of TlGaSeS layered single crystals
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
, cilt.51, sa.6, ss.2031-2035, 2007 (SCI-Expanded)
Optical constants of Tl4Ga3InSe8 layered single crystals
Below and above bandgap excited photoluminescence in Tl4InGa3S8 layered single crystals
Refractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystals
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.204, sa.9, ss.3165-3169, 2007 (SCI-Expanded)
Dispersive optical constants of Tl2InGaSe4 single crystals
Crystal data and some physical properties of Tl2InGaTe4 crystals
Optical properties of Tl2InGaS4 layered single crystal
Optical absorption and reflection studies of Tl4InGa3S8 layered single crystals
Dispersive optical constants and temperature tuned band gap energy of Tl2InGaS4 layered crystals
Specific features of the optical spectra in Tl2In2S3Se layered single crystals
Energy band gap and oscillator parameters of Ga4Se3S single crystals
Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor
Thermal lattice scattering mobility and carrier effective mass in intrinsic Tl2InGaTe4 single crystals
Trapping center parameters and optical absorption in. quaternary TI4In3GaS8, Tl4InGa3Se8,and Tl2InGaS4 semiconductors
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
, cilt.50, sa.4, ss.1104-1108, 2007 (SCI-Expanded)
Study of trapping and recombination centres in Tl2InGaTe4 chain crystals by dark electrical conductivity and photoconductivity measurements
Photoelectronic and electrical properties of Tl2InGaS4 layered crystals
Acoustic phonons scattering mobility and carrier effective mass in In6S7 crystals
Excitation and temperature tuned photoluminescence in Tl2In2S3Se layered crystals
Thermally stimulated current observation of trapping centers in an undoped Tl4Ga3InSe8 layered single crystal
Influence of isomorphic atom substitution on lattice anisotropy of thallium dichalcogenide layered mixed crystals
Thermally stimulated currents in layered semiconductor Tl4In3GaS8
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
, cilt.21, sa.9, ss.1250-1255, 2006 (SCI-Expanded)
Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals
Visible photoluminescence from chain Tl4In3GaSe8 semiconductor
JOURNAL OF PHYSICS-CONDENSED MATTER
, cilt.18, sa.26, ss.6057-6064, 2006 (SCI-Expanded)
Determination of trapping center parameters of Tl2InGaS4-layered crystals by thermally stimulated current measurements
Optical properties of TlInS2 layered single crystals near the absorption edge
Light illumination effect on the electrical and photovoltaic properties of In6S7 crystals
JOURNAL OF PHYSICS-CONDENSED MATTER
, cilt.18, sa.19, ss.4609-4614, 2006 (SCI-Expanded)
Electron-phonon short-range interactions mobility and p- to n-type conversion in TlGaS2 crystals
Low-temperature Raman scattering in TlGaxIn1-xS2 layered mixed crystals: Compositional dependence of the mode frequencies and line shapes
Optoelectronic and electrical properties of TlGaS2 single crystal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.202, sa.13, ss.2501-2507, 2005 (SCI-Expanded)
Compositional dependence of the Raman lineshapes in GaSxSe1-x layered mixed crystals
Effect of low-energy electron irradiation on (Bi, Pb)-2212 superconductors
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals
Temperature dependence of Raman-active mode frequencies and linewidths in TlGaSe2 layered crystals
Electrical and photoconductive properties of GaS0.75Se0.25 mixed crystals
Trap levels in layered semiconductor Ga2SeS
Thermally stimulated currents in layered Ga4SeS3 semiconductor
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.201, sa.13, ss.2980-2985, 2004 (SCI-Expanded)
Infrared photoluminescence from TlGaS2 layered single crystals
Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals
Trapping center parameters in TlInS2 layered crystals by thermally stimulated current measurements
Gallium and thallium NMR study of phase transitions and incommensurability in the layered semiconductor TlGaSe2
Investigation of carrier scattering mechanisms in TIInS2 single crystals by Hall effect measurements
Hall effect, space-charge limited current and photoconductivity measurements on TlGaSe2 layered crystals
Trapping center parameters of TlGaSe2 layered crystals
Anharmonic line shift and linewidth of the Raman modes in TlInS2 layered crystals
Effect of B2O3 addition on the formation and properties of Tl-2212 and Tl-2223 superconductors
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
, cilt.199, sa.2, ss.272-276, 2003 (SCI-Expanded)
Thermally stimulated current analysis of shallow levels in TlGaS2 layered single crystals
Photoelectronic, optical and electrical properties of TlInS2 single crystals
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
, cilt.199, sa.2, ss.277-283, 2003 (SCI-Expanded)
Trapping centers in undoped GaS layered single crystals
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
, cilt.77, ss.603-606, 2003 (SCI-Expanded)
Effect of Li addition on the properties of Bi-based superconductors
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
, cilt.13, sa.2, ss.3158-3160, 2003 (SCI-Expanded)
Trap levels in layered semiconductor TlInS1.9Se0.1
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
, cilt.196, sa.2, ss.422-428, 2003 (SCI-Expanded)
Thermally stimulated currents in n-InS single crystals
Effect of crystal disorder on linewidth of the Raman modes in GaS1-xSex layered mixed crystals
Photoelectronic and electrical properties of CuIn5S8 single crystals
Temperature- and excitation intensity-dependent photoluminescence in TlInSeS single crystals
JOURNAL OF PHYSICS-CONDENSED MATTER
, cilt.14, sa.49, ss.13685-13692, 2002 (SCI-Expanded)
Photoelectronic and electrical properties of InS crystals
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
, cilt.17, sa.12, ss.1288-1292, 2002 (SCI-Expanded)
Temperature dependence of the first-order Raman phonon lines in GaS0.25Se0.75 layered crystals
Anharmonicity of zone-center optical phonons: Raman scattering spectra of GaSe0.5S0.5 layered crystal
Defect luminescence in some layered binary chalcogenide semiconductors
Anharmonicity in GaTe layered crystals
Temperature-dependent Raman scattering spectra of epsilon-GaSe layered crystal
Defect luminescence in undoped p-type GaSe
Effect of lithium doping on the properties of Tl-based superconductors
Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals
Indirect nuclear exchange coupling and electronic structure of the chain semiconductor TlSe: A Tl-203 and Tl-205 NMR study
Temperature dependence of the first-order Raman scattering in GaS layered crystal (vol 116, pg 147, 2000)
Crystal data, photoconductivity and carrier scattering mechanisms in CuIn5S8 single crystals
Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals
Resonant Raman scattering near the free-to-bound transition in undoped p-GaSe
Donor-acceptor pair recombination in gallium sulfide
Critical currents in Bi-2223 tapes near T-c under magnetic field and gamma-irradiation
SUPERCONDUCTOR SCIENCE & TECHNOLOGY
, cilt.13, sa.12, ss.1625-1628, 2000 (SCI-Expanded)
Effect of magnetic field and gamma irradiation on the electrical properties and structure of the Tl-based ceramic superconductors
Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal
Temperature dependence of the first-order Raman scattering in GaS layered crystals
Voltage-current characteristics of the thallium-based ceramic superconductors
Radiative donor-acceptor pair recombination in TlInS2 single crystals
Donor-acceptor pair recombination in AgIn5S8 single crystals
Temperature dependence of the Raman-active phonon frequencies in indium sulfide
Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity
Structural and electrical characterization of Ag3Ga5Te9 and Ag3In5Se9 crystals
Low-temperature photoluminescence spectra of layered semiconductor TlGaS2
Low-temperature photoluminescence spectra of InS single crystals
Crystal data, electrical resistivity and mobility in Cu3In5Se9 and Cu3In5Te9 single crystals
Effect of magnetic field and temperature on the voltage-current characteristics of YBCO superconductor
Voltage-current characteristics of polycrystalline (Bi,Pb)(2)Sr2Ca2Cu3O10 superconductor at different magnetic fields and temperatures
Anisotropy of electrical resistivity and hole mobility in InTe single crystals
LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS
COMPOSITION VARIATIONS OF LATTICE-PARAMETERS OF TLIN(SE1-XTEX)2, TLIN(SE1-XSX)2, AND TLIN1-XGAXSE2 MIXED-CRYSTALS
Lattice parameters of TlGa1‐xInxS2 and TlGa(S1‐xSex)2 layer mixed crystals
Pressure dependence of the raman spectra of cdinals4 layer crystal
ELASTIC COEFFICIENTS IN TLGA(S1-XSEX)2 AND TLINXGA1-XS2 LAYER MIXED-CRYSTALS BY BRILLOUIN-SCATTERING
LOW-TEMPERATURE PHASE-TRANSITIONS IN TLGAS2 LAYER CRYSTALS
Raman and Infrared Studies of AgIn5S8 and CuIn5S8 Single Crystals
Elastic Properties of GaS1−xSex Layer Mixed Crystals by Brillouin Scattering
Composition variations of lattice parameters of TlGa(S1−xSex)2 layer mixed crystals
BRILLOUIN-SCATTERING IN TLGA(S1-XSEX)2 AND TLINXGA1-XS2 LAYER MIXED-CRYSTALS
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
, cilt.32, ss.541-542, 1993 (SCI-Expanded)
Vibrational Spectra of Spinel—Type Compound CuIn5S8
INFLUENCE OF ANISOTROPIC ETCHING ON THE MECHANICAL STRENGTH OF SINGLE-CRYSTAL SILICON-WAFERS
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
, cilt.127, sa.1, ss.127-131, 1991 (SCI-Expanded)
RAMAN-SPECTROSCOPY OF THE PHOTOELECTRIC PHASE-TRANSITION IN MIXED TLGA(SE1-XSEX)2 CRYSTALS - INHOMOGENEOUSLY BROADENED SOFT MODE
FIZIKA TVERDOGO TELA
, cilt.32, sa.1, ss.54-59, 1990 (SCI-Expanded)
Lattice Vibrations in CuIn5S8 Crystals
Long‐wavelength optical phonons in Ag3B5IIIC9VI single crystals
Infrared Reflection Spectra of Cu3B 5IIIC 9VI Single Crystals
RAMAN-SPECTROSCOPY OF SOFT AND RIGID MODES IN FERROELECTRIC TLINS2
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
, cilt.153, sa.2, ss.727-739, 1989 (SCI-Expanded)
Long‐Wave Optical Phonons in InSbSe3 Layer Single Crystals
Infrared Reflectivity Spectra of Cu3In5S9 Layer Single Crystals
VIBRATIONAL-SPECTRA OF TLINS2, TLIN0.95GA0.05S2, AND TLIN(S0.8SE0.2)2 CRYSTALS IN THE VICINITY OF PHASE-TRANSITIONS
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
, cilt.137, sa.1, ss.21-32, 1986 (SCI-Expanded)
Special features of first and second‐order Raman and infrared spectra of GaS1−xSex mixed crystals
Effect of Pressure on the Optical Absorption Edge in InS Monocrystals
BOND PARAMETERS OF TLINS2 VIBRATIONAL-SPECTRUM IN THE REGION OF PHASE-TRANSITIONS
FIZIKA TVERDOGO TELA
, cilt.27, sa.11, ss.3365-3368, 1985 (SCI-Expanded)
EFFECT OF SUBSTITUTION-TYPE DISORDER IN GAS1-XSEX LAYER SOLID-SOLUTIONS ON RAMAN-SCATTERING SPECTRA
DIRECTIONAL DEPENDENCE OF EXTRAORDINARY INFRARED OSCILLATOR PARAMETERS OF TLGAS2-TYPE LAYER CRYSTALS
OPTICAL PHONONS IN GAS1-XSEX LAYER MIXED-CRYSTALS
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
, cilt.120, sa.1, ss.137-147, 1983 (SCI-Expanded)
SPECIAL FEATURES OF VIBRATIONAL PROPERTIES OF MIXED-CRYSTALS WITH TLSE STRUCTURE
OPTICAL PHONONS AND STRUCTURE OF TLGAS2, TLGASE2, AND TLINS2 LAYER SINGLE-CRYSTALS
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
, cilt.116, sa.2, ss.427-443, 1983 (SCI-Expanded)
Raman Scattering in Pb(MoO4)x(WO4)1−x Mixed Crystals
RAMAN LIGHT-SCATTERING UNDER PRESSURE AND FERROELASTIC PROPERTIES OF INS SINGLE-CRYSTALS
FIZIKA TVERDOGO TELA
, cilt.24, sa.1, ss.139-144, 1982 (SCI-Expanded)
DAVYDOV SPLITTING AND RIGID-LAYER MODES IN INS CRYSTAL
POLYMORPHISM OF INS AT HIGH-PRESSURES
INFRARED REFLECTIVITY SPECTRA OF TLGAS2-TYPE LAYER CRYSTALS
PRESSURE-DEPENDENCE OF THE RAMAN-SPECTRA OF INDIUM SULFIDE
LONG-WAVE PHONONS IN LAYERED COMPOUNDS OF TLGASE2-TYPE IN LINEAR-CHAIN MODEL
FIZIKA TVERDOGO TELA
, cilt.23, sa.5, ss.1357-1360, 1981 (SCI-Expanded)
Long‐Wave Optical Phonons in In6S7 Layer Crystals
Raman Spectra of TlGaxIn1−x S2 Layer Solid Solutions
VIBRATIONAL-SPECTRA OF TLGATE2, TLINTE2, AND TLINSE2 LAYER SINGLE-CRYSTALS
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
, cilt.97, sa.1, ss.367-377, 1980 (SCI-Expanded)
Vibrational Spectra of a GaTe Layer Crystal
Symmetry of lattice vibrations of multilayer TlInSe2, TlInTe2, and TlGaTe2 crystals
Long‐wave lattice vibrations of TlInS2xSe2(1−x) and TlGaS2xSe2(1‐x) layer solid solutions
Infrared spectra of the layer compound InS
Optical phonons in layer TIInSe2 single crystals
Mixed one‐ and two‐mode behaviour of optical phonons in TlGaS2xSe2(1‐x) and TlInS2xSe2(1‐x) layer solid solutions
SYMMETRY OF LATTICE-VIBRATIONS OF TLINSE2, TLINTE2, AND TLGATE2 LAYER CRYSTALS
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA
, sa.3, ss.104-106, 1979 (SCI-Expanded)
Raman study of layer TlGaS2, β‐TlInS2, and TlGaSe2 crystals
SPECTRA OF COMBINATION SCATTERING AND INTERPACKET INTERACTION IN INS CRYSTAL
FIZIKA TVERDOGO TELA
, cilt.20, sa.3, ss.791-795, 1978 (SCI-Expanded)
Photoluminescence of layered Ga1‐xInxSe crystals at two‐photon optical excitation
RAMAN-SCATTERING IN SOME III-VI LAYER SINGLE-CRYSTALS
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
, cilt.85, sa.1, ss.381-386, 1978 (SCI-Expanded)
Infrared and Raman Spectra of Layer InSe Single Crystals
Singularities of spectra of infrared reflection of tertiary compounds of the type T1BX2
Atomic chains and lattice vibration characteristics in A2IIIB3VI compounds with tetrahedral coordination of atoms
Optical phonons in TlGaS2
IR REFLECTION SPECTRA OF TERNARY COMPOUNDS OF T1BX2-TYPE
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA
, sa.7, ss.120-124, 1977 (SCI-Expanded)
OPTICAL PHONONS IN LAYERED TLGAS2, BETA-TLINS2 AND TLGASE2 CRYSTALS
FIZIKA TVERDOGO TELA
, cilt.19, sa.10, ss.2960-2963, 1977 (SCI-Expanded)
VIBRATIONAL-SPECTRA OF GA2SE3, GA2S3 AND SOLID-SOLUTIONS ON ITS BASE
FIZIKA TVERDOGO TELA
, cilt.19, sa.6, ss.1766-1770, 1977 (SCI-Expanded)
OPTICAL-ABSORPTION EDGE OF IN X GA 1-X SB SOLID-SOLUTIONS
SOVIET PHYSICS SEMICONDUCTORS-USSR
, cilt.5, sa.7, ss.1141-1140, 1972 (SCI-Expanded)
INTERACTION OF PLASMONS WITH OPTICAL PHONONS IN IN0.5 GA3.5 SB
SOVIET PHYSICS SOLID STATE,USSR
, cilt.13, sa.1, ss.124, 1971 (SCI-Expanded)
Diğer Dergilerde Yayınlanan Makaleler
