Photoelectronic, optical and electrical properties of TlInS2 single crystals

Qasrawi A., Gasanly N.

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol.199, no.2, pp.277-283, 2003 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 199 Issue: 2
  • Publication Date: 2003
  • Doi Number: 10.1002/pssa.200306668
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.277-283
  • Middle East Technical University Affiliated: Yes


To specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photoconductivity and Hall measurements were carried out in the temperature range of 100-400 K, 110-350 K and 170-400 K, respectively. The Hall measurements revealed that the crystals exhibit an anomalous behavior of Hall voltage by changing sign (from p-type to n-type conductivity) at 315 K. By means of the temperature dependence of dark electrical resistivity, Hall coefficient and photocurrent measurements the donor energy levels located at 360, 280, 152 and 112 meV were detected. The photocurrent-illumination intensity dependence follows the law I-Ph proportional to F-gamma with gamma being 1.0 (linear), 0.5 (sublinear), 1.0 (linear) and 1.3 (supralinear) at low, moderate, high and very high illumination intensities indicating the monomolecular in the bulk, bimolecular and strong recombination at the surface, respectively. The photocurrent is observed to increase with increasing temperature up to a maximum temperature (T-m) 245 K. T is observed to shift to higher temperature as F increases, and disappears in the region where I-Ph-F dependence is supralinear. The phenomenon is attributed to the exchange in the behavior of the sensitizing and recombination centers. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.