Study on thermoluminescence of TlInS2 layered crystals doped with Pr

Delice S., IŞIK M., Gasanly N.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.80, pp.99-103, 2018 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 80
  • Publication Date: 2018
  • Doi Number: 10.1016/j.mssp.2018.02.027
  • Journal Name: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.99-103
  • Keywords: Thermoluminescence, Chalcogenides, Defects, Doping, SINGLE-CRYSTALS, THERMO-LUMINESCENCE, OPTICAL-PROPERTIES, TLGASE2, MODEL
  • Middle East Technical University Affiliated: Yes

Abstract

Praseodymium (Pr) doped TlInS2 crystals were studied by means of thermoluminescence (TL) measurements performed below room temperature with various heating rates. Detected TL signal exhibited glow curve consisting in overlapping two TL peaks at temperatures of 35 K (peak A) and 48 K (peak B) for 0.6 K/s heating rate. TL curve was analyzed with curve fitting and initial rise methods. Both of the applied methods resulted in consistent activation energies of 19 and 45 meV. The revealed trap levels were found to be dominated by mixed order of kinetics. Various heating rate dependencies of TL glow curves were also investigated and it was found that while peak A shows usual behavior, peak B exhibits anomalous heating rate behavior. Distribution of trap levels was explored using an experimental method called as T-max-T-stop method. Quasi-continuous distributions with increasing activation energies from 19 to 29 meV (peak A) and from 45 to 53 meV (peak B) were ascribed to trap levels. Effect of Pr doping on the TL response of undoped TlInS2 crystals was discussed in the paper.