Optical band gap and dispersion of optical constants of Cu-Ga-S thin films

Isik M., Gullu H. H., COŞKUN E., Gasanly N.

OPTIK, cilt.186, ss.147-154, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 186
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1016/j.ijleo.2019.04.035
  • Dergi Adı: OPTIK
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.147-154
  • Anahtar Kelimeler: Optical properties, I-III-VI type semiconductors, Swanepoel method, VI SEMICONDUCTOR NANOCRYSTALS, I-III-VI2
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Thermally deposited Cu-Ga-S thin films were optically characterized by means of experimental techniques of transmission measurements. The analyses of transmittance spectra were accomplished by derivative spectrophotometry analyses to get gap energies of thin films. The transmittance spectra of thin films annealed at different temperatures presented interference fringes which were analyzed by Swanepoel envelope method. The wavelength dependencies of optical parameters; refractive index (n), real part of complex dielectric function (epsilon(re)) and extinction coefficient (k) were reported in the weak absorption region. The photon energy dependencies of n and epsilon(re) were analyzed using single-oscillator and Spitzer-Fan models, respectively.