Energy band gap and oscillator parameters of Ga4Se3S single crystals

Qasrawi A. F., Gasanly N.

SOLID STATE COMMUNICATIONS, cilt.142, sa.10, ss.566-568, 2007 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 142 Sayı: 10
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1016/j.ssc.2007.04.008
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.566-568
  • Anahtar Kelimeler: semiconductors, crystal growth, X-ray scattering, optical properties, GASE SEMICONDUCTOR-DETECTORS, LAYERED CRYSTALS, PHOTOLUMINESCENCE, BEAMS
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 and 2.55, respectively. (C) 2007 Elsevier Ltd. All rights reserved.