Energy band gap and oscillator parameters of Ga4Se3S single crystals

Qasrawi A. F., Gasanly N.

SOLID STATE COMMUNICATIONS, vol.142, no.10, pp.566-568, 2007 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 142 Issue: 10
  • Publication Date: 2007
  • Doi Number: 10.1016/j.ssc.2007.04.008
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.566-568
  • Keywords: semiconductors, crystal growth, X-ray scattering, optical properties, GASE SEMICONDUCTOR-DETECTORS, LAYERED CRYSTALS, PHOTOLUMINESCENCE, BEAMS
  • Middle East Technical University Affiliated: Yes


The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 and 2.55, respectively. (C) 2007 Elsevier Ltd. All rights reserved.