Thermally stimulated current measurements in undoped Ga3InSe4 single crystals

IŞIK M., Gasanly N.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.72, sa.6, ss.768-772, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 72 Sayı: 6
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.jpcs.2011.03.008
  • Dergi Adı: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.768-772
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The trap levels in nominally undoped Ga3InSe4 crystals were investigated in the temperature range of 10-300 K using the thermally stimulated currents technique. The study of trap levels was accomplished by the measurements of current flowing along the c-axis of the crystal. During the experiments we utilized a constant heating rate of 0.8 K/s. Experimental evidence is found for one hole trapping center in the crystal with activation energy of 62 meV. The analysis of the experimental TSC curve gave reasonable results under the model that assumes slow retrapping. The capture cross-section of the trap was determined as 1.0 x 10(-25) cm(2) with concentration of 1.4 x 10(17) cm(-3). (C) 2011 Elsevier Ltd. All rights reserved.