Multiphonon absorption processes in layered structured TlGaS2, TlInS2 and TlGaSe2 single crystals

IŞIK M., Gasanly N., KORKMAZ ÖZKAN F.

PHYSICA B-CONDENSED MATTER, cilt.421, ss.50-52, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 421
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.physb.2013.03.046
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.50-52
  • Anahtar Kelimeler: Semiconductors, Chalcogenides, Optical properties, Raman scattering, LATTICE-DYNAMICS, PHASE-TRANSITION, SPECTRA, RAMAN, GASE
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The infrared transmittance and Raman scattering spectra in TlGaS2, TlInS2 and TlGaSe2 layered single crystals grown by Bridgman method were studied in the frequency ranges of 400-1500 and 10-400 cm(-1), respectively. Three, three and five bands observed at room temperature in IR transmittance spectra of TlGaS2, TlInS2 and TlGaSe2, respectively, were interpreted in terms of multiphonon absorption processes. (C) 2013 Elsevier By. All rights reserved.