Optical and Nanomechanical Properties of Ga(2)Se(3)Single Crystals and Thin Films

Işık M., Emir C., Gullu H. H., Gasanly N.

JOM, cilt.73, sa.2, ss.558-565, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 73 Sayı: 2
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1007/s11837-020-04379-y
  • Dergi Adı: JOM
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, ABI/INFORM, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.558-565
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The optical and nanomechanical properties of Ga(2)Se(3)single crystals and thin films were investigated using reflection, transmission, and nanoindentation measurements. The reflection spectrum recorded in the 525- to 1100-nm range was analyzed to get the band gap energy of the crystal structure, and derivative analysis of the spectrum resulted in band gap energy of 1.92 eV which was attributed to indirect transition. The band gap energy of thermally evaporated Ga(2)Se(3)thin film was determined from the analysis of the transmittance spectrum. The absorption coefficient analysis presented the direct band gap energy as 2.60 eV. The refractive index was investigated in the transparent region using the Wemple-DiDomenico single-oscillator model. Nanoindentation measurements were carried out on the crystal and thin film structures of Ga2Se3. Nanohardness and elastic modulus of the Ga(2)Se(3)single crystals and thin films were calculated following the Oliver-Pharr analysis method.