Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry

Guler I., Işık M., Gasanly N., Gasanova L. G., Babayeva R. F.

JOURNAL OF ELECTRONIC MATERIALS, cilt.48, sa.4, ss.2418-2422, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 48 Sayı: 4
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1007/s11664-019-07000-4
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2418-2422
  • Anahtar Kelimeler: Semiconductors, optical properties, optical constants, critical points, REFRACTIVE-INDEX, TEMPERATURE-DEPENDENCE, SEMICONDUCTORS, ANISOTROPY, CONSTANTS, LAYERS, FILMS, GAP
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.