As-grown TlGaSeS crystals have been implanted by a ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by nitrogen ion beam of about 120 keV having dose of 1 x 10(16) ions/cm(2). The effect of N implantation and annealing at 300 degrees C was studied by using thermally stimulated current measurements. The measurements were performed in temperatures ranging from 10 K to 250 K. The experimental evidences were found for the presence of one shallow electron trapping center and one deep hole trapping center with activation energies of 6 meV and 796 meV, respectively. The capture cross-sections (3.0 x 10(-24) cm(2) and 2.3 x 10(-15) cm(2)) and concentrations (5.6 x 10(11) cm(-3) and 2.1 x 10(13) cm(-3)) were determined for the electron and hole trapping centers, respectively. (C) 2015 Elsevier Ltd. All rights reserved.