The effect of Ga/In ratio and annealing temperature on the nonlinear absorption behaviors in amorphous TlGaxIn(1-x)S2 (0 ≤ x ≤ 1) chalcogenide thin films

Ünlü B. A. , Karatay A., Yüksek M., Ünver H., Gasanly N. , Elmali A.

Optics and Laser Technology, vol.128, 2020 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 128
  • Publication Date: 2020
  • Doi Number: 10.1016/j.optlastec.2020.106230
  • Title of Journal : Optics and Laser Technology
  • Keywords: Nonlinear absorption, TlGaxIn(1-x)S2, Z-scan, Thin films, Localized defect states, Amorphous semiconductors, OPTICAL-PROPERTIES, ELECTRICAL-CONDUCTIVITY, DIELECTRIC COEFFICIENTS, 2-PHOTON ABSORPTION, GALLIUM SULFIDE, TLGAS2, TLINS2, DEPENDENCE