The effect of Ga/In ratio and annealing temperature on the nonlinear absorption behaviors in amorphous TlGaxIn(1-x)S2 (0 ≤ x ≤ 1) chalcogenide thin films

Ünlü B. A., Karatay A., Yüksek M., Ünver H., Gasanly N., Elmali A.

Optics and Laser Technology, cilt.128, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 128
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.optlastec.2020.106230
  • Dergi Adı: Optics and Laser Technology
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Nonlinear absorption, TlGaxIn(1-x)S2, Z-scan, Thin films, Localized defect states, Amorphous semiconductors, OPTICAL-PROPERTIES, ELECTRICAL-CONDUCTIVITY, DIELECTRIC COEFFICIENTS, 2-PHOTON ABSORPTION, GALLIUM SULFIDE, TLGAS2, TLINS2, DEPENDENCE
  • Orta Doğu Teknik Üniversitesi Adresli: Evet