Compositional dependence of the Raman lineshapes in GaSxSe1-x layered mixed crystals


Gasanly N.

JOURNAL OF RAMAN SPECTROSCOPY, cilt.36, ss.879-883, 2005 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 36 Konu: 9
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1002/jrs.1375
  • Dergi Adı: JOURNAL OF RAMAN SPECTROSCOPY
  • Sayfa Sayısı: ss.879-883

Özet

The Raman spectra of GaSxSe1-x layered mixed crystals were studied for a wide range of composition (0 <= x <= 1) at 300 and 10 K. The effect of crystal disorder on the linewidth broadening of shear and compressional modes is discussed. The asymmetry in the Raman lineshape was analyzed for intralayer modes exhibiting one-mode behavior. Copyright (c) 2005 John Wiley & Sons, Ltd.