Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals

Qasrawi A., Gasanly N.

MATERIALS RESEARCH BULLETIN, vol.39, no.9, pp.1353-1359, 2004 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 39 Issue: 9
  • Publication Date: 2004
  • Doi Number: 10.1016/j.materresbull.2003.12.018
  • Journal Name: MATERIALS RESEARCH BULLETIN
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1353-1359
  • Keywords: semiconductors, Chalcogenides, layered compounds, defects, electrical properties, SELENIDE SINGLE-CRYSTALS, LAYERED CRYSTALS, LATTICE INTERACTION, GALLIUM SELENIDE, TLINS2, SEMICONDUCTORS, GASE
  • Middle East Technical University Affiliated: Yes

Abstract

Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole-phonon short-range interactions scattering with a hole-phonon coupling constant of 0.17. (C) 2004 Elsevier Ltd. All rights reserved.