Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals


Qasrawi A., Gasanly N.

MATERIALS RESEARCH BULLETIN, cilt.39, sa.9, ss.1353-1359, 2004 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 39 Konu: 9
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1016/j.materresbull.2003.12.018
  • Dergi Adı: MATERIALS RESEARCH BULLETIN
  • Sayfa Sayıları: ss.1353-1359

Özet

Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole-phonon short-range interactions scattering with a hole-phonon coupling constant of 0.17. (C) 2004 Elsevier Ltd. All rights reserved.