Low-temperature photoluminescence spectra of InS single crystals

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Gasanly N., Aydinli A.

SOLID STATE COMMUNICATIONS, vol.101, no.11, pp.797-799, 1997 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 101 Issue: 11
  • Publication Date: 1997
  • Doi Number: 10.1016/s0038-1098(96)00704-1
  • Journal Name: SOLID STATE COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.797-799
  • Keywords: semiconductors, optical properties, luminescence
  • Middle East Technical University Affiliated: Yes

Abstract

Photoluminescence (PL) spectra of InS were investigated in the wavelength region 477.5-860 nm and in the temperature range 8.5-293 K. We observed three PL bands centered at 605 nm (A-band), 626 nm (B-band) and 820 nm (C-band). The A- and B-bands are due to radiative transitions hom the donor level at 0.01 eV below the bottom of the conduction band to the valence band and from the donor level at 0.06 eV below the bottom of the conduction band to the acceptor level 0.12 eV above the top of the valence band, respectively. The proposed energy-level scheme allows us to interpret the recombination processes in InS single crystals. (C) 1997. Elsevier Science Ltd.