Low-temperature photoluminescence spectra of InS single crystals

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Gasanly N., Aydinli A.

SOLID STATE COMMUNICATIONS, cilt.101, sa.11, ss.797-799, 1997 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 101 Sayı: 11
  • Basım Tarihi: 1997
  • Doi Numarası: 10.1016/s0038-1098(96)00704-1
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.797-799
  • Anahtar Kelimeler: semiconductors, optical properties, luminescence
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Photoluminescence (PL) spectra of InS were investigated in the wavelength region 477.5-860 nm and in the temperature range 8.5-293 K. We observed three PL bands centered at 605 nm (A-band), 626 nm (B-band) and 820 nm (C-band). The A- and B-bands are due to radiative transitions hom the donor level at 0.01 eV below the bottom of the conduction band to the valence band and from the donor level at 0.06 eV below the bottom of the conduction band to the acceptor level 0.12 eV above the top of the valence band, respectively. The proposed energy-level scheme allows us to interpret the recombination processes in InS single crystals. (C) 1997. Elsevier Science Ltd.