Investigation of traps distribution in GaS single crystals by thermally stimulated current measurements

Delice S., Isik M., HASANLI N.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.125, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 125
  • Publication Date: 2021
  • Doi Number: 10.1016/j.mssp.2020.105626
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Middle East Technical University Affiliated: Yes


Thermally stimulated current (TSC) investigations of p-GaS (gallium sulfide) single crystals grown by Bridgman method were achieved by virtue of consecutive experiments carried out at various heating rates in between 0.4 and 1.0 K/s in the temperature range of 10-280 K. One single TSC peak around 148 K and overlapped, incomplete peaks in the end limit temperature of the experiments were observed in the spectrum recorded at constant heating rate of 1.0 K/s. Individual peak was analyzed utilizing curve fitting method. Existence of one trapping level centered at 0.11 eV was revealed by the analyses. Heating rate dependency of obtained TSC curve was also studied and it was shown that TSC intensity decreased besides increase of peak maximum temperature with heating rate. Characteristics feature of trapping mechanism was investigated in detail by employing different stopping temperature between 50 and 110 K. Analyses on T-m-T-stop dependency resulted in a presence of quasi-continuously distributed traps with activation energies ranging from 0.11 to 0.55 eV. The revealed trap was thought to be arising from intrinsic defect possibly created by V-Ga or antisite S-Ga.