Thermoluminescence properties and trapping parameters of TlGaS2 single crystals


Delice S., Isik M., HASANLI N.

Journal of Luminescence, vol.244, 2022 (Journal Indexed in SCI Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 244
  • Publication Date: 2022
  • Doi Number: 10.1016/j.jlumin.2021.118714
  • Title of Journal : Journal of Luminescence
  • Keywords: 2D materials, Defects, Semiconductors, Thermoluminescence, TlGaS2

Abstract

© 2021 Elsevier B.V.TlGaS2 layered single crystals have been an attractive research interest due to their convertible characteristics into 2D structure. In the present paper, structural, optical and thermoluminescence properties of TlGaS2 single crystals were investigated. XRD pattern of the crystal presented five well-defined peaks associated with monoclinic unit cell. Band gap and Urbach energies were found to be 2.57 and 0.25 eV, respectively, from the analyses of transmittance spectrum. Thermoluminescence measurements were carried out above room temperature up to 660 K at various heating rates. One TL peak with peak maximum temperature of 573 K was obtained in the TL spectrum at 1.0 K/s. Curve fitting, initial rise and variable heating rate methods were used for analyses. All of those resulted in presence of a deep trapping level with activation energy around 0.92 eV. Heating rate dependence of the TL peak was also studied and it was indicated that peak maximum temperature shifted to higher temperatures besides decreasing TL intensity as the higher heating rates were employed.