Trapping centers and their distribution in Tl2In2Se3S layered single crystals

GÜLER I., Gasanly N.

SOLID STATE COMMUNICATIONS, cilt.150, ss.176-180, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 150
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.ssc.2009.10.028
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.176-180
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Thermally stimulated current (TSC) measurements have been carried out on Tl(2)ln(2)Se(3)S layered single crystals in the temperature range of 10-175 K. The TSC spectra reveal the presence of two peaks (A and B). The electronic traps' distributions have been analyzed by different light illumination temperature techniques. It was revealed that the obtained traps' distribution can be described as an exponential one. The variations of one order of magnitude in the traps' density for every 30 meV (A peak) and 59 meV (B peak) were estimated. Moreover, the mean activation energy, attempt-to-escape frequency, capture cross section and concentration of the traps were determined. (C) 2009 Elsevier Ltd. All rights reserved.