Trapping centers and their distribution in Tl2In2Se3S layered single crystals

GÜLER I., Gasanly N.

SOLID STATE COMMUNICATIONS, vol.150, pp.176-180, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 150
  • Publication Date: 2010
  • Doi Number: 10.1016/j.ssc.2009.10.028
  • Journal Name: SOLID STATE COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.176-180
  • Middle East Technical University Affiliated: Yes

Abstract

Thermally stimulated current (TSC) measurements have been carried out on Tl(2)ln(2)Se(3)S layered single crystals in the temperature range of 10-175 K. The TSC spectra reveal the presence of two peaks (A and B). The electronic traps' distributions have been analyzed by different light illumination temperature techniques. It was revealed that the obtained traps' distribution can be described as an exponential one. The variations of one order of magnitude in the traps' density for every 30 meV (A peak) and 59 meV (B peak) were estimated. Moreover, the mean activation energy, attempt-to-escape frequency, capture cross section and concentration of the traps were determined. (C) 2009 Elsevier Ltd. All rights reserved.