Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals

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Gasanly N., Aydinli A., Salihoglu O.

CRYSTAL RESEARCH AND TECHNOLOGY, cilt.36, sa.3, ss.295-301, 2001 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 36 Sayı: 3
  • Basım Tarihi: 2001
  • Doi Numarası: 10.1002/1521-4079(200103)36:3<295::aid-crat295>3.0.co;2-u
  • Dergi Adı: CRYSTAL RESEARCH AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.295-301
  • Anahtar Kelimeler: semiconductor compounds, layered crystals, GaSe, impurity levels, thermally stimulated current
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Undoped p-GaSe layered single crystals wet e grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the data revealed three trap levels at 0.02. 0.10 and 0.26 eV. The calculation for these traps yielded 8.8 x 10(-27), 1.9 x 10(-25). and 3.2 x 10(-21) cm(2) for capture cross sections and 3.2 x 10(14) 1.1 x 10(16) and 1.2 x 10(16) cm(-3) for the concentrations, respectively.