Raman scattering in TlInS2xSe2(1-x) layered mixed crystals (0.25 <= x <= 1): Compositional dependence of the mode frequencies and line widths


GÜLER I. , Gasanly N.

PHYSICA B-CONDENSED MATTER, vol.406, no.18, pp.3374-3376, 2011 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 406 Issue: 18
  • Publication Date: 2011
  • Doi Number: 10.1016/j.physb.2011.05.052
  • Title of Journal : PHYSICA B-CONDENSED MATTER
  • Page Numbers: pp.3374-3376
  • Keywords: Layered crystals, Raman line widths, Crystal disorder, SINGLE-CRYSTALS, ALLOY SEMICONDUCTORS, SOLID-SOLUTIONS, TLINS2, TLGASE2, TLINTE2, TEMPERATURE, DISORDER, SPECTRA, SHAPES

Abstract

The Raman spectra of TlInS2xSe2(1-x) layered mixed crystals were studied for a wide composition range (0.25 <= x <= 1) in the frequency region 10-360 cm(-1) at room temperature. The shift of Raman-active phonon frequencies versus mixed crystals composition x were established. The effect of crystal disorder on the line width broadening of three high-frequency Raman-active modes is reported. (C) 2011 Elsevier B.V. All rights reserved.