Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor

Guler I., Goksen K., Gasanly N., Turan R.

PHYSICA B-CONDENSED MATTER, vol.395, pp.116-120, 2007 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 395
  • Publication Date: 2007
  • Doi Number: 10.1016/j.physb.2007.03.002
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.116-120
  • Keywords: photoluminescence, semiconductors, layered crystals, defect levels, SINGLE-CRYSTALS, EXCITATION INTENSITY, TLINS2, PHOTOLUMINESCENCE, RECOMBINATION, DEPENDENCE, TLGASE2, ENERGY, BAND
  • Middle East Technical University Affiliated: Yes


The emission band spectra of undoped T1(2)In(2)Se(3)S layered crystals have been studied in the temperature range of 25-63 K and the wavelength region of 570-700nm. A broad photoluminescence band centered at 633 nm (1.96 eV) was observed at T = 25 K. Variation of emission band has been studied as a function of excitation laser intensity in the 2.7-111.4mWcm(-2) range. Radiative transitions from shallow donor level located at 0.03 eV below the bottom of conduction band to deep acceptor level located at 0.23 eV above the top of the valence band were suggested to be responsible for the observed PL band. From X-ray powder diffraction and optical absorption study, the parameters of monoclinic unit cell and the energy of indirect band gap were determined, respectively. (C) 2007 Elsevier B.V. All rights reserved.