Ellipsometry study of optical parameters of AgIn5S8 crystals

IŞIK M., Gasanly N.

PHYSICA B-CONDENSED MATTER, vol.478, pp.127-130, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 478
  • Publication Date: 2015
  • Doi Number: 10.1016/j.physb.2015.09.016
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.127-130
  • Keywords: Semiconductors, Optical properties, Ellipsometry, REFRACTIVE-INDEX, SINGLE-CRYSTALS, CUIN5S8, GROWTH
  • Middle East Technical University Affiliated: Yes


Agln(5)S(8) crystals grown by Bridgman method were characterized for optical properties by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficient were obtained from ellipsometiy experiments carried out in the 1.2-6.2 eV range. Direct band gap energy of 1.84 eV was found from the analysis of absorption coefficient vs. photon energy. The oscillator energy, dispersion energy and zero-frequency refractive index, high-frequency dielectric constant values were found from the analysis of the experimental data using Wemple-DiDomenico and Spitzer-Fan models. Crystal structure and atomic composition ratio of the constituent elements in the AgIn5S8 crystal were revealed from structural characterization techniques of X-ray diffraction and energy dispersive spectroscopy. (C) 2015 Elsevier B.V. All rights reserved