Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals


Qasrawi A., Gasanly N.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.20, no.5, pp.446-452, 2005 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 20 Issue: 5
  • Publication Date: 2005
  • Doi Number: 10.1088/0268-1242/20/5/021
  • Title of Journal : SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Page Numbers: pp.446-452

Abstract

The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conductivity exhibits activation behaviour with activation energies (0.360 +/- 0.005) eV and (0.240 +/- 0.005) eV at high and low temperatures, respectively. The space charge limited current analysis has shown that the energy level of (0.240 +/- 0.005) eV is a trapping state with trap density of (2.2-3.9) x 10(12) cm(-3). The data analysis of the photocurrent-temperature dependence has revealed two photoconductivity activation energies of (0.660 +/- 0.005) eV and (0.360 +/- 0.005) eV in the temperature regions of 290-350 K and 220-280 K, respectively. The illumination dependence of photoconductivity is found to exhibit linear and supralinear recombination mechanisms above and below 290 K, respectively.