Temperature dependence of the first-order Raman scattering in GaS layered crystals

Creative Commons License

Gasanly N., Aydinli A., Ozkan H., Kocabas C.

SOLID STATE COMMUNICATIONS, vol.116, no.3, pp.147-151, 2000 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 116 Issue: 3
  • Publication Date: 2000
  • Doi Number: 10.1016/s0038-1098(00)00292-1
  • Journal Name: SOLID STATE COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.147-151
  • Keywords: semiconductors, optical properties, inelastic light scattering, LIGHT-SCATTERING, OPTICAL PHONONS
  • Middle East Technical University Affiliated: Yes

Abstract

The temperature dependence (15-293 K) of the six Raman-active mode frequencies and linewidths in gallium sulfide has been measured in the frequency range from 15 to 380 cm(-1). We observed softening and broadening of the optical phonon lines with increasing temperature. Comparison between the experimental data and theories of the shift and broadening of the interlayer and intralayer phonon lines during the heating of the crystal showed that the experimental dependencies can be explained by the contributions from thermal expansion and lattice anharmonicity. The pure-temperature contribution (phonon-phonon coupling) is due to three- and four-phonon processes. (C) 2000 Elsevier Science Ltd. All rights reserved.