Temperature dependence of the first-order Raman scattering in GaS layered crystals

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Gasanly N., Aydinli A., Ozkan H., Kocabas C.

SOLID STATE COMMUNICATIONS, cilt.116, sa.3, ss.147-151, 2000 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 116 Sayı: 3
  • Basım Tarihi: 2000
  • Doi Numarası: 10.1016/s0038-1098(00)00292-1
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.147-151
  • Anahtar Kelimeler: semiconductors, optical properties, inelastic light scattering, LIGHT-SCATTERING, OPTICAL PHONONS
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The temperature dependence (15-293 K) of the six Raman-active mode frequencies and linewidths in gallium sulfide has been measured in the frequency range from 15 to 380 cm(-1). We observed softening and broadening of the optical phonon lines with increasing temperature. Comparison between the experimental data and theories of the shift and broadening of the interlayer and intralayer phonon lines during the heating of the crystal showed that the experimental dependencies can be explained by the contributions from thermal expansion and lattice anharmonicity. The pure-temperature contribution (phonon-phonon coupling) is due to three- and four-phonon processes. (C) 2000 Elsevier Science Ltd. All rights reserved.