Temperature-tuned band gap properties of MoS2 thin films

Surucu O., Isik M., Gasanly N., Terlemezoglu M., Parlak M.

MATERIALS LETTERS, vol.275, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 275
  • Publication Date: 2020
  • Doi Number: 10.1016/j.matlet.2020.128080
  • Journal Name: MATERIALS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: MoS2, Band gap energy, Optical properties, Temperature dependency
  • Middle East Technical University Affiliated: Yes

Abstract

MoS2 is one of the fascinating members of transition metal dichalcogenides and has attracted great attention due to its various optoelectronic device applications and its characteristic as two-dimensional material. The present paper reports the structural and temperature tuned optical properties of MoS2 thin films grown by RF magnetron sputtering technique. It was observed that the atomic composition ratio of Mo:S was nearly equal to 1:2 and the deposited thin films have hexagonal crystalline structure exhibiting Raman peaks around 376 and 410 cm(-1). The band gap energies were determined as 1.66 and 1.71 eV at 300 and 10 K, respectively and temperature dependency of band gap energy was analyzed by means of Varshni and O'Donnell-Chen models. (C) 2020 Elsevier B.V. All rights reserved.