Defect luminescence in undoped p-type GaSe


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Aydinli A., Gasanly N. , Goksen K.

PHILOSOPHICAL MAGAZINE LETTERS, cilt.81, sa.12, ss.859-867, 2001 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 81 Konu: 12
  • Basım Tarihi: 2001
  • Doi Numarası: 10.1080/09500830110093885
  • Dergi Adı: PHILOSOPHICAL MAGAZINE LETTERS
  • Sayfa Sayıları: ss.859-867

Özet

Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T=10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.