Defect luminescence in undoped p-type GaSe

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Aydinli A., Gasanly N., Goksen K.

PHILOSOPHICAL MAGAZINE LETTERS, vol.81, no.12, pp.859-867, 2001 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 81 Issue: 12
  • Publication Date: 2001
  • Doi Number: 10.1080/09500830110093885
  • Journal Name: PHILOSOPHICAL MAGAZINE LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.859-867
  • Middle East Technical University Affiliated: Yes

Abstract

Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T=10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.