Spectroscopic ellipsometry investigation of optical properties of beta-Ga2S3 single crystals

Işık M., Gasanly N., Gasanova L.

OPTICAL MATERIALS, cilt.86, ss.95-99, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 86
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.optmat.2018.09.049
  • Dergi Adı: OPTICAL MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.95-99
  • Anahtar Kelimeler: Ellipsometry, Ga2S3, Optical properties, ALPHA-GA2S3, PHOTOEMISSION, CONSTANTS
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Ga2S3 single crystals were studied by x-ray diffraction (XRD), energy dispersive spectroscopy and spectroscopic ellipsometry measurements. XRD pattern of the sample is well-matched with reported hexagonal structure of beta-Ga2S3 . The spectra of real and imaginary parts of complex dielectric function (epsilon = epsilon(1) + epsilon(2)) and refractive index (N = n + ik) were plotted in the 1.2-6.2 eV range according to results of ellipsometric data. The e 2 -spectrum and analyses of absorption coefficient pointed out that studied sample has band gap energy of 2.48 eV which is consistent with that of beta-Ga(2)S(3)2. Critical point energies of beta-Ga2S3 were also reported in the present study.