LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS


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ALLAKHVERDIEV K., GASANLY N. , AYDINLI A.

SOLID STATE COMMUNICATIONS, cilt.94, ss.777-782, 1995 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 94 Konu: 9
  • Basım Tarihi: 1995
  • Doi Numarası: 10.1016/0038-1098(95)00037-2
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Sayfa Sayısı: ss.777-782

Özet

Low-temperature photoluminescence spectra of TlInS2, TlIn0.95 Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel.