Temperature dependence of the Raman-active phonon frequencies in indium sulfide


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Gasanly N. , Ozkan H., Aydinli A., Yilmaz I.

SOLID STATE COMMUNICATIONS, vol.110, no.4, pp.231-236, 1999 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 110 Issue: 4
  • Publication Date: 1999
  • Doi Number: 10.1016/s0038-1098(99)00062-9
  • Title of Journal : SOLID STATE COMMUNICATIONS
  • Page Numbers: pp.231-236
  • Keywords: semiconductors, optical properties, inelastic light scattering, SCATTERING

Abstract

The temperature dependence of the Raman-active mode frequencies in indium sulfide was measured in the range from 10 to 300 K. The analysis of the temperature dependence of the A(g) intralayer optical modes show that Raman frequency shift results from the change of harmonic frequency with volume expansion and anharmonic coupling to phonons of other branches. The pure-temperature contribution (phonon-phonon coupling) is due to three- and four-phonon processes. (C) 1999 Elsevier Science Ltd. All rights reserved.