Temperature dependence of the Raman-active phonon frequencies in indium sulfide

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Gasanly N., Ozkan H., Aydinli A., Yilmaz I.

SOLID STATE COMMUNICATIONS, vol.110, no.4, pp.231-236, 1999 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 110 Issue: 4
  • Publication Date: 1999
  • Doi Number: 10.1016/s0038-1098(99)00062-9
  • Journal Name: SOLID STATE COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.231-236
  • Keywords: semiconductors, optical properties, inelastic light scattering, SCATTERING
  • Middle East Technical University Affiliated: Yes

Abstract

The temperature dependence of the Raman-active mode frequencies in indium sulfide was measured in the range from 10 to 300 K. The analysis of the temperature dependence of the A(g) intralayer optical modes show that Raman frequency shift results from the change of harmonic frequency with volume expansion and anharmonic coupling to phonons of other branches. The pure-temperature contribution (phonon-phonon coupling) is due to three- and four-phonon processes. (C) 1999 Elsevier Science Ltd. All rights reserved.