Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity

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Gasanly N., Serpenguzel A., Gurlu O., Aydinli A., Yilmaz I.

SOLID STATE COMMUNICATIONS, vol.108, no.8, pp.525-530, 1998 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 108 Issue: 8
  • Publication Date: 1998
  • Doi Number: 10.1016/s0038-1098(98)00396-2
  • Journal Name: SOLID STATE COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.525-530
  • Middle East Technical University Affiliated: Yes

Abstract

The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is explained using the configuration coordinate model. The blue shift of the emission band peak energy and the sublinear increase of the emission band intensity with increasing excitation intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model. (C) 1998 Elsevier Science Ltd. All rights reserved.