Thermoluminescence in gallium sesquisulfide single crystals: usual and unusual heating rate dependencies

Guler I., Işık M., Gasanova L., Mahammadov A., Gasanly N.

OPTIK, cilt.165, ss.132-136, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 165
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.ijleo.2018.03.105
  • Dergi Adı: OPTIK
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.132-136
  • Anahtar Kelimeler: Thermoluminescence, Defects, Crystals, ALPHA-GA2S3, PHOTOEMISSION, MODEL
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Thermoluminescence (TL) experiments were conducted for Ga2S3 crystals to obtain information about trapping parameters. TL measurements were performed from 10 to 300 K with varying heating rates in the range of 0.2-0.8 K/s. Two TL glow peaks centered at 44K (peak A) and 91 K (peak B) were observed at heating rate of beta=0.5 K/s. For peak A, TL intensity decreased whereas that for peak B increased with elevating the heating rates that means anomalous heating rate occurred for peak B. TL glow curves were analyzed using initial rise method to find activation energies of traps. Distribution of trap centers was investigated using T-max - T-stop method. Quasi-continuous distributions with increasing activation energies from 40 to 135 meV and 193 to 460 meV were attributed to trap centers A and B, respectively. (C) 2018 Elsevier GmbH. All rights reserved.