Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1-x) mixed crystals

Guler I., Gasanly N.

APPLIED SURFACE SCIENCE, vol.318, pp.113-115, 2014 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 318
  • Publication Date: 2014
  • Doi Number: 10.1016/j.apsusc.2014.01.131
  • Journal Name: APPLIED SURFACE SCIENCE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.113-115
  • Keywords: Layered crystals, Raman line widths, Crystal disorder, SINGLE-CRYSTALS, SOLID-SOLUTIONS, TLINS2, TEMPERATURE, SCATTERING, DISORDER, TLGASE2, SHAPES
  • Middle East Technical University Affiliated: Yes

Abstract

The Raman spectra of mixed crystals TlInS2xSe2(1-x) have been investigated in the composition range of 0.25 <= x <= 0.75 and in the high-frequency region of 250-350 cm(-1) at room temperature. It was observed that Raman-active mode frequencies decrease as the selenium atoms content increases in the mixed crystals. The effect of crystal disorder on the line broadening of three high-frequency modes is reported. (C) 2014 Elsevier B.V. All rights reserved.