Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1-x) mixed crystals
APPLIED SURFACE SCIENCE, vol.318, pp.113-115, 2014 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 318
- Publication Date: 2014
- Doi Number: 10.1016/j.apsusc.2014.01.131
- Journal Name: APPLIED SURFACE SCIENCE
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.113-115
- Keywords: Layered crystals, Raman line widths, Crystal disorder, SINGLE-CRYSTALS, SOLID-SOLUTIONS, TLINS2, TEMPERATURE, SCATTERING, DISORDER, TLGASE2, SHAPES
- Middle East Technical University Affiliated: Yes
Abstract
The Raman spectra of mixed crystals TlInS2xSe2(1-x) have been investigated in the composition range of 0.25 <= x <= 0.75 and in the high-frequency region of 250-350 cm(-1) at room temperature. It was observed that Raman-active mode frequencies decrease as the selenium atoms content increases in the mixed crystals. The effect of crystal disorder on the line broadening of three high-frequency modes is reported. (C) 2014 Elsevier B.V. All rights reserved.