Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals


Gasanly N.

PHYSICA B-CONDENSED MATTER, cilt.407, sa.21, ss.4318-4322, 2012 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 407 Konu: 21
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.physb.2012.07.025
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Sayfa Sayıları: ss.4318-4322

Özet

The absorption edge of undoped Tl2Ga2S3Se crystals have been studied through transmission and reflection measurements in the wavelength range 440-1100 nm and in the temperature range 10-300 K. The absorption edge was observed to shift toward lower energy values with increasing temperature. As a result, the rate of the indirect band gap variation with temperature gamma = -2.6 x 10(-4) eV/K and the absolute zero value of the band gap energy E-gi(0)=2.42 eV were obtained.