Temperature dependence of the first-order Raman phonon lines in GaS0.25Se0.75 layered crystals


Gasanly N.

ACTA PHYSICA POLONICA A, vol.102, no.6, pp.801-810, 2002 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 102 Issue: 6
  • Publication Date: 2002
  • Doi Number: 10.12693/aphyspola.102.801
  • Title of Journal : ACTA PHYSICA POLONICA A
  • Page Numbers: pp.801-810

Abstract

Systematic measurements by Raman scattering. of the frequency and line width of the zone-center optical modes in GaS0.25Se0.75 layered crystal over the temperature, range of 10-300 K are carried out. The analysis of-temperature dependence of intralayer modes shows that frequency shift and line broadening are successfully modeled by including the contributions from thermal expansion and lattice anharmonicity. The purely anharmonic contribution (phonon-phonon coupling) is found to be due to three-phonon processes.