Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals
OPTICAL MATERIALS, vol.35, no.3, pp.414-418, 2013 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 35 Issue: 3
- Publication Date: 2013
- Doi Number: 10.1016/j.optmat.2012.09.019
- Journal Name: OPTICAL MATERIALS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.414-418
- Middle East Technical University Affiliated: Yes
Abstract
Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals. (c) 2012 Elsevier B.V. All rights reserved.