Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements


QASRAWI A. F. H. , Gasanly N.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol.205, no.7, pp.1662-1665, 2008 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 205 Issue: 7
  • Publication Date: 2008
  • Doi Number: 10.1002/pssa.200824105
  • Title of Journal : PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
  • Page Numbers: pp.1662-1665

Abstract

In this work, the dark electrical resistivity, charge carriers density and Hall mobility of Ga4Se3S single crystals have been measured and analyzed in the temperature region of 200-350 K. The data analyses have shown that this crystal exhibits an extrinsic n-type of conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of energy level as 0.31 eV. The temperature dependence of carrier density was analyzed by using the single donor-single acceptor model. The latter analysis allowed the determination of electron effective mass as 0.38m(0), hole effective mass as 0.42m(0), donor impurity energy level as 0.45 eV, acceptor-donor concentration ratio (N-a/N-d) as 0.97 and a donor-acceptor concentration difference as N-d - N-a = 1.5 x 10(11) cm(-3). The Hall mobility of Ga4Se3S is found to increase with decreasing temperature following a power law of slope of similar to(-6.3). The abnormal behavior of mobility was attributed to the domination of phonon scattering and/or crystals anisotropy. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.