QASRAWI, A. F. H. And Gasanly, N. 2008. Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.205, no.7 , 1662-1665.

QASRAWI, A. F. H., & Gasanly, N., (2008). Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.205, no.7, 1662-1665.

QASRAWI, ATEF, And NIZAMI HASANLI. "Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements," PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.205, no.7, 1662-1665, 2008

QASRAWI, ATEF F. And Gasanly, NIZAMI. "Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements." PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.205, no.7, pp.1662-1665, 2008

QASRAWI, A. F. H. And Gasanly, N. (2008) . "Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements." PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.205, no.7, pp.1662-1665.

@article{article, author={ATEF FAYEZ HASAN QASRAWI And author={NIZAMI HASANLI}, title={Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements}, journal={PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, year=2008, pages={1662-1665} }