Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals


HASANLI N.

CRYSTAL RESEARCH AND TECHNOLOGY, cilt.44, ss.322-326, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 44 Konu: 3
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1002/crat.200800369
  • Dergi Adı: CRYSTAL RESEARCH AND TECHNOLOGY
  • Sayfa Sayıları: ss.322-326

Özet

The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4.4 x 10(-4) eV/K. The absolute zero value of the band gap energy was obtained as E-gi(0) = 1.95 eV. The dispersion of the refractive index is discussed in terms of the single oscillator model. The refractive index dispersion parameters: oscillator wavelength and strength were found to be 2.53 x 10(-7) m and 9.64 x 10(13) m(-2), respectively. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim