Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals

HASANLI N.

CRYSTAL RESEARCH AND TECHNOLOGY, vol.44, no.3, pp.322-326, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 44 Issue: 3
  • Publication Date: 2009
  • Doi Number: 10.1002/crat.200800369
  • Journal Name: CRYSTAL RESEARCH AND TECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.322-326
  • Keywords: optical constants, dispersion of refractive index, optical band gap, layered crystals, ELECTRICAL-PROPERTIES, TLGASE2, ABSORPTION, SPECTRA, TLINS2
  • Middle East Technical University Affiliated: Yes

Abstract

The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4.4 x 10(-4) eV/K. The absolute zero value of the band gap energy was obtained as E-gi(0) = 1.95 eV. The dispersion of the refractive index is discussed in terms of the single oscillator model. The refractive index dispersion parameters: oscillator wavelength and strength were found to be 2.53 x 10(-7) m and 9.64 x 10(13) m(-2), respectively. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim