HASANLI, N. 2009. Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals. CRYSTAL RESEARCH AND TECHNOLOGY , vol.44, no.3 , 322-326.

HASANLI, N., (2009). Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals. CRYSTAL RESEARCH AND TECHNOLOGY , vol.44, no.3, 322-326.

HASANLI, NIZAMI. "Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals," CRYSTAL RESEARCH AND TECHNOLOGY , vol.44, no.3, 322-326, 2009

HASANLI, NIZAMI. "Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals." CRYSTAL RESEARCH AND TECHNOLOGY , vol.44, no.3, pp.322-326, 2009

HASANLI, N. (2009) . "Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals." CRYSTAL RESEARCH AND TECHNOLOGY , vol.44, no.3, pp.322-326.

@article{article, author={NIZAMI HASANLI}, title={Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals}, journal={CRYSTAL RESEARCH AND TECHNOLOGY}, year=2009, pages={322-326} }