Composition-tuned optical absorption and luminescence of TlGaxIn1-xS2 layered mixed crystals at T=10 K

HASANLI N.

OPTICAL MATERIALS, cilt.84, ss.94-98, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 84
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.optmat.2018.06.056
  • Dergi Adı: OPTICAL MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.94-98
  • Anahtar Kelimeler: Semiconductors, Chalcogenides, Optical properties, Defects, Photoluminescence, TLINS2, TLGAS2, TRANSITIONS, SPECTRA, GASE
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Transmittance on TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) was carried out in the 2.35-2.75 eV photon energy range at T = 10 K. Band gap energies of crystals were obtained utilizing the derivative spectra of transmittance and photon energy dependence of absorption coefficient. The dependence of direct band gap energy on composition at T = 10 K revealed that as gallium composition is elevated in the mixed crystals, the direct band gap energy increases from 2.56 to 2.67 eV.