Composition-tuned optical absorption and luminescence of TlGaxIn1-xS2 layered mixed crystals at T=10 K


HASANLI N.

OPTICAL MATERIALS, vol.84, pp.94-98, 2018 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 84
  • Publication Date: 2018
  • Doi Number: 10.1016/j.optmat.2018.06.056
  • Journal Name: OPTICAL MATERIALS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.94-98
  • Keywords: Semiconductors, Chalcogenides, Optical properties, Defects, Photoluminescence, TLINS2, TLGAS2, TRANSITIONS, SPECTRA, GASE

Abstract

Transmittance on TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) was carried out in the 2.35-2.75 eV photon energy range at T = 10 K. Band gap energies of crystals were obtained utilizing the derivative spectra of transmittance and photon energy dependence of absorption coefficient. The dependence of direct band gap energy on composition at T = 10 K revealed that as gallium composition is elevated in the mixed crystals, the direct band gap energy increases from 2.56 to 2.67 eV.