Structural and optical properties of thermally annealed thallium indium disulfide thin films

Guler I., Gasanly N.

THIN SOLID FILMS, vol.704, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 704
  • Publication Date: 2020
  • Doi Number: 10.1016/j.tsf.2020.137985
  • Journal Name: THIN SOLID FILMS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Applied Science & Technology Source, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Thallium indium disulfide, Thin films, X-ray diffraction, Atomic force microscopy, Raman spectroscopy, ELECTRICAL-CONDUCTIVITY, TLINS2, TEMPERATURE, ABSORPTION, TLGASE2, CRYSTALS, ZNO
  • Middle East Technical University Affiliated: Yes

Abstract

Structural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature transmittance spectrum, the band gap energies of the films were identified. The decrease in band gap energies of the films with the annealing temperature up to 300 degrees C was observed due to increase in crystallite size and decrease in lattice strain. From Raman measurements, it was observed that the Raman shifts of the films were well correlated with those of TlInS2 bulk crystal.