Low-temperature photoluminescence in layered structured TlGa0.5In0.5Se2 crystals

Gasanly N.

JOURNAL OF ALLOYS AND COMPOUNDS, vol.547, pp.33-36, 2013 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 547
  • Publication Date: 2013
  • Doi Number: 10.1016/j.jallcom.2012.08.134
  • Page Numbers: pp.33-36


Photoluminescence (PL) spectra of TlGa0.5In0.5Se2 layered crystals have been studied in the wavelength region of 900-1020 nm and in the temperature range of 10-61 K. A broad PL band centered at 951 nm (1.304 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.15-51.5 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission band is in agreement with the idea of separation inhomogeneity of donor-acceptor pairs. Radiative transitions from donor level located at 647 meV below the bottom of conduction band to shallow acceptor level located at 22 meV above the top of the valence band were suggested to be responsible for the observed PL band. (c) 2012 Elsevier B.V. All rights reserved.