Shallow trapping center parameters in as-grown AgIn5S8 crystals determined by thermally stimulated current measurements

YILDIRIM T., Gasanly N.

CRYSTAL RESEARCH AND TECHNOLOGY, cilt.44, sa.12, ss.1267-1271, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 44 Sayı: 12
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1002/crat.200900495
  • Dergi Adı: CRYSTAL RESEARCH AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1267-1271
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Thermally stimulated current measurements were carried out on as-grown AgIn5S8 single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 K/s. The analysis of the data revealed the electron trap level located at 5 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.2 x 10(-25) cm(2) for capture cross section and 6.1 x 10(12) cm(-3) for the concentration. It was concluded that in this center retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim