Shallow trapping center parameters in as-grown AgIn5S8 crystals determined by thermally stimulated current measurements

YILDIRIM T., Gasanly N.

CRYSTAL RESEARCH AND TECHNOLOGY, cilt.44, sa.12, ss.1267-1271, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 44 Konu: 12
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1002/crat.200900495
  • Sayfa Sayıları: ss.1267-1271


Thermally stimulated current measurements were carried out on as-grown AgIn5S8 single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 K/s. The analysis of the data revealed the electron trap level located at 5 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.2 x 10(-25) cm(2) for capture cross section and 6.1 x 10(12) cm(-3) for the concentration. It was concluded that in this center retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim