As-grown Tl2In2S3Se layered single crystals were studied by thermally stimulated current measurements in the temperature range of 10-170K with different heating rates. Experimental data were analyzed according to various methods such as curve fitting and initial rise. The analysis of thermally stimulated current spectra registered at light excitation temperature T-0 = 10K revealed the trap level located at 30 meV. Attempt-to-escape frequency, concentration and capture cross section of the traps were determined as 4.2 s(-1), 2.4 x 10(9) cm(-3) and 1.7 x 10(-24) cm(2), respectively. It was concluded that slow retrapping (monomolecular condition) occurs for the traps in Tl2In2S3Se crystals. By the analysis of thermally stimulated current data at different light excitation temperatures, the value of 39 meV/decade was obtained for traps distribution. (C) 2009 Elsevier B.V. All rights reserved.