Effect of crystal disorder on linewidth of the Raman modes in GaS1-xSex layered mixed crystals

Gasanly N.

CRYSTAL RESEARCH AND TECHNOLOGY, cilt.38, sa.11, ss.962-967, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 38 Sayı: 11
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1002/crat.200310121
  • Dergi Adı: CRYSTAL RESEARCH AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.962-967
  • Anahtar Kelimeler: Raman scattering, crystal disorder, layered mixed crystals, GaS1-xSex, INTERATOMIC DISTANCES, SCATTERING SPECTRA, PHONON LIFETIMES, SEMICONDUCTORS, GASE
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The linewidths of Raman-active intralayer compressional modes in GaS1-xSex layered mixed crystals (0 less than or equal to x less than or equal to 1) have been measured in the 10-300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three-phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of the intralayer phonon lines with temperature. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.