Effect of crystal disorder on linewidth of the Raman modes in GaS1-xSex layered mixed crystals


Gasanly N.

CRYSTAL RESEARCH AND TECHNOLOGY, vol.38, no.11, pp.962-967, 2003 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 38 Issue: 11
  • Publication Date: 2003
  • Doi Number: 10.1002/crat.200310121
  • Title of Journal : CRYSTAL RESEARCH AND TECHNOLOGY
  • Page Numbers: pp.962-967
  • Keywords: Raman scattering, crystal disorder, layered mixed crystals, GaS1-xSex, INTERATOMIC DISTANCES, SCATTERING SPECTRA, PHONON LIFETIMES, SEMICONDUCTORS, GASE

Abstract

The linewidths of Raman-active intralayer compressional modes in GaS1-xSex layered mixed crystals (0 less than or equal to x less than or equal to 1) have been measured in the 10-300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three-phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of the intralayer phonon lines with temperature. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.