Low temperature absorption edge and photoluminescence study in TlIn(Se1-xSx)(2) layered mixed crystals

HASANLI N.

PHYSICA B-CONDENSED MATTER, cilt.530, ss.82-85, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 530
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.physb.2017.11.042
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.82-85
  • Anahtar Kelimeler: Semiconductors, Band gap energy, Photoluminescence, Mixed crystals, ISOMORPHIC ATOM SUBSTITUTION, EQUAL-TO 1, OPTICAL-PROPERTIES, SINGLE-CRYSTALS, TLGASE2, TLINS2, SPECTRA, GASE
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Transmission on TlIn(Se1-xSx)(2) mixed crystals (0.25 <= x <= 1) were carried out in the 400-800 nm wavelength range at T = 10 K. Band gap energies of the studied crystals were obtained using the derivative spectra of transmittance. The compositional dependence of direct band gap energy at T = 10 K revealed that as sulfur composition is increased in the mixed crystals, the direct band gap energy rises from 2.26 eV (x = 0.25) to 2.56 eV (x = 1).