Low temperature absorption edge and photoluminescence study in TlIn(Se1-xSx)(2) layered mixed crystals

HASANLI N.

PHYSICA B-CONDENSED MATTER, vol.530, pp.82-85, 2018 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 530
  • Publication Date: 2018
  • Doi Number: 10.1016/j.physb.2017.11.042
  • Journal Name: PHYSICA B-CONDENSED MATTER
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.82-85
  • Keywords: Semiconductors, Band gap energy, Photoluminescence, Mixed crystals, ISOMORPHIC ATOM SUBSTITUTION, EQUAL-TO 1, OPTICAL-PROPERTIES, SINGLE-CRYSTALS, TLGASE2, TLINS2, SPECTRA, GASE
  • Middle East Technical University Affiliated: Yes

Abstract

Transmission on TlIn(Se1-xSx)(2) mixed crystals (0.25 <= x <= 1) were carried out in the 400-800 nm wavelength range at T = 10 K. Band gap energies of the studied crystals were obtained using the derivative spectra of transmittance. The compositional dependence of direct band gap energy at T = 10 K revealed that as sulfur composition is increased in the mixed crystals, the direct band gap energy rises from 2.26 eV (x = 0.25) to 2.56 eV (x = 1).