Low temperature absorption edge and photoluminescence study in TlIn(Se1-xSx)(2) layered mixed crystals
PHYSICA B-CONDENSED MATTER, cilt.530, ss.82-85, 2018 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 530
- Basım Tarihi: 2018
- Doi Numarası: 10.1016/j.physb.2017.11.042
- Dergi Adı: PHYSICA B-CONDENSED MATTER
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.82-85
- Anahtar Kelimeler: Semiconductors, Band gap energy, Photoluminescence, Mixed crystals, ISOMORPHIC ATOM SUBSTITUTION, EQUAL-TO 1, OPTICAL-PROPERTIES, SINGLE-CRYSTALS, TLGASE2, TLINS2, SPECTRA, GASE
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
Transmission on TlIn(Se1-xSx)(2) mixed crystals (0.25 <= x <= 1) were carried out in the 400-800 nm wavelength range at T = 10 K. Band gap energies of the studied crystals were obtained using the derivative spectra of transmittance. The compositional dependence of direct band gap energy at T = 10 K revealed that as sulfur composition is increased in the mixed crystals, the direct band gap energy rises from 2.26 eV (x = 0.25) to 2.56 eV (x = 1).