Optical properties of Tl2InGaS4 layered single crystal


Qasrawi A. F. , Gasanly N.

OPTICAL MATERIALS, vol.29, no.12, pp.1763-1767, 2007 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 29 Issue: 12
  • Publication Date: 2007
  • Doi Number: 10.1016/j.optmat.2006.09.008
  • Journal Name: OPTICAL MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1763-1767
  • Keywords: semiconductors, optical properties, band gap, refractive index, lattice parameters, ACCEPTOR PAIR RECOMBINATION, ELECTRICAL-PROPERTIES, TLINS2, TLGASE2, ABSORPTION
  • Middle East Technical University Affiliated: Yes

Abstract

The temperature dependence of the optical band gap of Tl2InGaS4 single crystal in the temperature region of 300-500 K and the room temperature refractive index, n(lambda), have been investigated. The absorption coefficient, which was calculated from the transmittance and reflectance spectra in the incident photon energy range of 2.28-2.48 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values as temperature increases. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.35 eV) that exhibits a temperature coefficient of -4.03 x 10(-4) eV/K. The room temperature n(lambda), calculated from the reflectance and transmittance data, allowed the identification of the oscillator strength and energy, static and lattice dielectric constants, and static refractive index as 16.78 eV and 3.38 eV, 5.96 and 11.77, and 2.43, respectively. (c) 2006 Elsevier B.V. All rights reserved.