Electronic and Optical Insights into NaBi(WO<sub>4</sub>)<sub>2</sub>: A Promising Candidate for Optoelectronic Applications

Isik M., ALTUNTAŞ G., HASANLI N.

JOURNAL OF ELECTRONIC MATERIALS, no.5, pp.4101-4105, 2025 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Publication Date: 2025
  • Doi Number: 10.1007/s11664-025-11887-7
  • Journal Name: JOURNAL OF ELECTRONIC MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Compendex, Computer & Applied Sciences, INSPEC
  • Page Numbers: pp.4101-4105
  • Middle East Technical University Affiliated: Yes

Abstract

This study provides an in-depth exploration of the electronic and optical properties of NaBi(WO4)2 crystal, with a focus on its potential applications in optoelectronic technologies. Absorbance measurements revealed a bandgap energy of 3.45 eV, highlighting the crystal's suitability for ultraviolet-visible light interactions. Thermally stimulated current (TSC) analysis uncovered a hole defect center, offering insights into charge trapping and transport mechanisms within the crystal. A prominent TSC peak was observed around 194 K, corresponding to a trap activation energy of 0.32 eV. Photoluminescence (PL) spectra displayed multiple emission peaks in the ultraviolet, blue, and green regions, emphasizing the crystal's ability to emit across a broad spectrum. These findings reveals the band structure and defect dynamics of NaBi(WO4)2, establishing its promise for advanced optoelectronic applications, particularly in blue and green light-emitting devices.