Low-temperature Raman scattering in TlGaxIn1-xS2 layered mixed crystals: Compositional dependence of the mode frequencies and line shapes
ACTA PHYSICA POLONICA A, vol.108, no.6, pp.997-1003, 2005 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 108 Issue: 6
- Publication Date: 2005
- Doi Number: 10.12693/aphyspola.108.997
- Journal Name: ACTA PHYSICA POLONICA A
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.997-1003
- Middle East Technical University Affiliated: Yes
Abstract
The Raman spectra of TlGaxIn1-xS2 layered mixed crystals were studied for a, wide range of composition (0 <= x <= 1) at T = 50 K. The effect of crystal disorder on the line width broadening of the Raman-active modes are discussed. The asymmetry in the Raman line shape is analyzed for two interlayer and intralayer modes exhibiting one-mode behavior.