Structural and electrical characterization of Ag3Ga5Te9 and Ag3In5Se9 crystals

Parlak M. , Ercelebi C., Gunal I. , Ozkan H., Gasanly N.

CRYSTAL RESEARCH AND TECHNOLOGY, vol.33, no.6, pp.923-928, 1998 (Journal Indexed in SCI) identifier identifier


X-ray powder diffraction studies revealed that Ag3Ga5Te9 and Ag3In5Se9 crystallize in orthorhombic and tetragonal systems. respectively. The temperature dependent conductivity and Hall effect measurements have been carried out between 65-480 K. Ag3Ga5Te9 exhibits p-type conduction with a room temperature conductivity of 4.3 x 10(-4) ( and mobility less than 1 cm(2)/V.s. Ag3In5Se9 was identified to be n-type with room temperature conductivity 7.2 x 10(-5) ( and mobility 20 cm(2)/V.s. From temperature dependence of the conductivity three different impurity ionization energies were obtained for both compounds. The anomalous behavior observed in the temperature dependence of mobility was attributed to the different features of the microstructure.