Refractive index and oscillator parameters in TlGaS2, TlGaSe2 and TlInS2 layered crystals


HASANLI N.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.13, pp.49-52, 2011 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Article
  • Volume: 13
  • Publication Date: 2011
  • Title of Journal : JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Page Numbers: pp.49-52

Abstract

The optical properties of TlGaS2, TlGaSe2, and TlInS2 crystals have been investigated through the transmission and reflection measurements at room temperature in the wavelength range of 400-1100 nm. These measurements allowed determination of spectral dependence of the refractive index for all crystals studied. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: the oscillator energies, the dispersion energies, and the zero-frequency dielectric constants and refractive indices were determined.